SK Hynix ships HBM4E memory samples: 16Gbps, 48GB per stack, 20% power gain
SK Hynix announced on June 18, 2026, that it has shipped samples of its 12-layer HBM4E high-bandwidth memory to major AI customers, moving into the customer-qualification phase for next-gen memory. The new HBM4E delivers up to 16 Gbps per pin (vs. ~10–13 Gbps on HBM4), 48GB capacity per stack, and more than 20% power efficiency gain over the previous generation. The advanced MR-MUF packaging process improved thermal resistance by 17% compared to HBM4, enabling stable operation in high-performance AI environments.
SK Hynix ships came roughly three weeks after Samsung announced its own HBM4E samples on May 29, 2026. Both companies are racing to qualify their memory with NVIDIA, AMD, Google, and other AI accelerator makers before mass production ramps in late 2026/early 2027. According to Counterpoint Research, SK Hynix holds a commanding 58% share of the HBM market as of Q1 2026, with Samsung and Micron trailing at ~21% each. The company is understood to use TSMC 3nm-class base dies, while Samsung uses its own 4nm process.
For infrastructure architects, HBM4E timing is critical: NVIDIA's expected Vera successor (Rubin Ultra) and AMD's MI500 will pack 384GB of HBM per GPU—8 stacks of 48GB—up 30% from current generations. Architects shipping large-scale training clusters in 2027 care because early customer qualification locks supply chains; a supplier's ability to deliver volume matters more than press releases. SK Hynix's market leadership and NVIDIA relationship give it an edge, but execution risk in manufacturing scales rises sharply with next-gen node transitions.
Sources
- Primary source
- news.skhynix.com
“SK hynix Inc. announced today that it has shipped samples of HBM4E, a next-generation DRAM for AI, to major customers... The 12-layer HBM4E shows improvements in both performance and power efficiency. The product features a maximum data processing speed of 16Gbps per pin and power efficiency that is up more than 20 percent from previous models.”
- koreaherald.com
“SK hynix said Thursday it has shipped samples of its 12-layer HBM4E, the next generation of high-bandwidth memory for artificial intelligence, to major customers, moving the company into the customer-qualification stage roughly three weeks after rival Samsung Electronics claimed the industry's first such shipment.”
- koreaherald.com
“SK hynix leads the HBM market with a revenue share of about 58 percent as of the first quarter of 2026, according to Counterpoint Research, with Samsung and US-based Micron each trailing at roughly 21 percent.”